Accession Number:

AD0748007

Title:

Transient Surface Damage.

Descriptive Note:

Final technical rept. 1 Jun 71-31 May 72,

Corporate Author:

RESEARCH TRIANGLE INST DURHAM N C

Personal Author(s):

Report Date:

1972-06-01

Pagination or Media Count:

73.0

Abstract:

Measurements made on MOS structures during the 0.0001 to 1000 second interval following pulsed irradiation demonstrate that a rapid annealing phase is associated with the space charge decay in SiO2. This phenomenon is characterized in state-of-the-art thermal oxides and in oxides implanted or doped with various impurity species. A model involving thermal release of the trapped positive charge from a distribution of trapping sites in the oxides forbidden band conveniently approximates the major features of short-term annealing. Energy density distributions for the trapped charge are developed from the annealing data and are compared for different oxides. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE