Accession Number:
AD0748007
Title:
Transient Surface Damage.
Descriptive Note:
Final technical rept. 1 Jun 71-31 May 72,
Corporate Author:
RESEARCH TRIANGLE INST DURHAM N C
Personal Author(s):
Report Date:
1972-06-01
Pagination or Media Count:
73.0
Abstract:
Measurements made on MOS structures during the 0.0001 to 1000 second interval following pulsed irradiation demonstrate that a rapid annealing phase is associated with the space charge decay in SiO2. This phenomenon is characterized in state-of-the-art thermal oxides and in oxides implanted or doped with various impurity species. A model involving thermal release of the trapped positive charge from a distribution of trapping sites in the oxides forbidden band conveniently approximates the major features of short-term annealing. Energy density distributions for the trapped charge are developed from the annealing data and are compared for different oxides. Author
Descriptors:
Subject Categories:
- Solid State Physics