Electron Beam Semiconductor Amplifier (L-Band).
Triannual rept. no. 3, 1 May-30 Jun 72,
WATKINS-JOHNSON CO PALO ALTO CALIF
Pagination or Media Count:
The goal of this program is to design, develop, fabricate and test exploratory development models of an L-band, RF pulse amplifier capable of 2000 watts peak RF output power at 1300 MHz plus or minus 10 with a power gain of 25 dB at 50 efficiency. Effort during this period has been concentrated on a diode passivation and stabilization study with the goal of developing semiconductor targets that are stable under electron beam bombardment. Various sizes and types of diodes have been fabricated with silicon-dioxide and phosphorus glass passivation. These have been tested under electron beam bombardment and some have been baked out and operated in a sealed off device. Author
- Electrical and Electronic Equipment