Accession Number:

AD0747868

Title:

Electron Beam Semiconductor Amplifier (L-Band).

Descriptive Note:

Triannual rept. no. 3, 1 May-30 Jun 72,

Corporate Author:

WATKINS-JOHNSON CO PALO ALTO CALIF

Personal Author(s):

• Long,James A.

Report Date:

1972-07-01

Pagination or Media Count:

18.0

Abstract:

The goal of this program is to design, develop, fabricate and test exploratory development models of an L-band, RF pulse amplifier capable of 2000 watts peak RF output power at 1300 MHz plus or minus 10 with a power gain of 25 dB at 50 efficiency. Effort during this period has been concentrated on a diode passivation and stabilization study with the goal of developing semiconductor targets that are stable under electron beam bombardment. Various sizes and types of diodes have been fabricated with silicon-dioxide and phosphorus glass passivation. These have been tested under electron beam bombardment and some have been baked out and operated in a sealed off device. Author

Descriptors:

• *PULSE AMPLIFIERS
• *RADIOFREQUENCY AMPLIFIERS
• L BAND
• ELECTRON TUBE TARGETS
• SEMICONDUCTOR DIODES
• SILICON DIOXIDE
• ELECTRON GUNS
• DAMAGE
• RADIATION EFFECTS
• RELIABILITY(ELECTRONICS)

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE