Accession Number:

AD0747730

Title:

Study of Damage to 'Transplant' Semiconductor Crystals under the Effect of Powerful Laser Emission,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Report Date:

1972-06-09

Pagination or Media Count:

14.0

Abstract:

A study was made of the conditions of failure on a number of CdSx-CdSe1-x and CdSx-ZnS1-x crystals under the effect of giant pulses from ruby lasers in which the basic light-absorption mechanisms are two-photon transitions. Crystal failure threshold is found to depend on the state of the surface and the quality of its treatment. An analysis is made of the dependence of the failure threshold on 1 the composition of mixed crystals, 2 the polarization of the incident light, 3 the duration of the light pulse, and 4 the temperature. Thermal shock--that is, the rapid heating of the lattice by virtue of the transmission to it of the energy of the activated electrons--is cited as the most probable failure mechanism. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE