Accession Number:

AD0747546

Title:

Some Aspects of Construction and Production Technology in High-Frequency MOS Transistors,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

Report Date:

1972-06-06

Pagination or Media Count:

11.0

Abstract:

In the input stages of radio apparatus, and particularly true for TV apparatus, it is desirable to use active elements having the highest possible input impedance. Among semiconductor devices, such are the field effect transistors. One version of this type being increasingly more widely used in recent years is the MOS metal oxide semiconductor transistor. The paper reports on a few special structural and technical problems connected with the high-frequency n-channel MOS transistor. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE