Interface Phenomena Integrated Circuits Oxides.
Semiannual rept. no. 3, 30 Jun-31 Dec 71,
CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE
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The analytical investigation of ion migration in SiO2 layers in a MOS structure was continued and results of numerical computations are given. Progress in the experimental investigation of ion transport in a a SiO2 layer in a symmetrical structure of Si - SiO2 - Si, b insulating layers like Al2O3 on silicon and other semiconductor electrodes is also described. A method has been developed to eliminate the sodium ions from the oxide layers by an initial bias-temperature treatment followed by an etching process where approximately 100 A thickness of oxide is removed. Results are described on a change in the dielectric constant of an oxide layer after ionizing radiation possibly due to compaction. Author
- Electrical and Electronic Equipment
- Solid State Physics