Accession Number:

AD0747409

Title:

Image Conversion Panel Techniques Using Direct Carrier Injection.

Descriptive Note:

Final rept. 1 Apr 71-30 Apr 72,

Corporate Author:

HUGHES RESEARCH LABS MALIBU CALIF

Personal Author(s):

• Baird,J. M.

Report Date:

1972-07-01

Pagination or Media Count:

83.0

Abstract:

The feasibility of real-time millimeter-wave image conversion using direct carrier injection as a means of bulk conductivity modulation has been demonstrated. A 400-element image conversion panel has been constructed using large p-i-n diode structures to control the bulk transmission of 94 GHz signals. The diodes measure 0.5 cm in width by 0.376 cm in length by 0.05 cm in thickness between injecting contacts. Ion implanted arsenic and alloyed aluminum form the n and p junctions, respectively, on high resistivity p-type silicon. A single crystal detector behind the panel was used to detect the transmitted rf signal as the panel elements were switched in succession at 25 framessec. Author

Descriptors:

• *SCREENS(DISPLAYS)
• *IMAGE CONVERTERS
• SEMICONDUCTOR DIODES
• MILLIMETER WAVES
• ALUMINUM ALLOYS
• ARSENIC ALLOYS
• CHARGE CARRIERS
• ION BOMBARDMENT
• TEST METHODS
• WIRING DIAGRAMS
• REAL TIME

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE