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Image Conversion Panel Techniques Using Direct Carrier Injection.
Final rept. 1 Apr 71-30 Apr 72,
HUGHES RESEARCH LABS MALIBU CALIF
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The feasibility of real-time millimeter-wave image conversion using direct carrier injection as a means of bulk conductivity modulation has been demonstrated. A 400-element image conversion panel has been constructed using large p-i-n diode structures to control the bulk transmission of 94 GHz signals. The diodes measure 0.5 cm in width by 0.376 cm in length by 0.05 cm in thickness between injecting contacts. Ion implanted arsenic and alloyed aluminum form the n and p junctions, respectively, on high resistivity p-type silicon. A single crystal detector behind the panel was used to detect the transmitted rf signal as the panel elements were switched in succession at 25 framessec. Author
APPROVED FOR PUBLIC RELEASE