Investigation of Silicon Carbide (SiC) Gun-Electron-Induced- Semiconductor-Hybrid-Amplifier (GEISHA) Diode Feasibility and Fabrication
Final rept. 1 Jun 1971-30 Jun 1972
WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA
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Single crystal alpha-SiC for GEISHA device application has been favorably evaluated. The electron carrier velocity has been measured up to 8, 200,000 cmsec on 10 to the 17th powercu cm uncompensated n-type crystals, with no indication of velocity saturation. The carrier saturation velocity is therefore expected to be above that of silicon. Measurements of the critical field have confirmed earlier work and give a value of 2 to 4 x10 to the 6th power voltscm. Schottky barrier diodes were fabricated on a variety of SiC substrates. Barrier heights were independent of the metal layer of SiC type. Schottky barriers formed on molten salt etched 10 to the 17th powercu cm n-type samples exhibited, hard reverse voltage characteristics out to true avalanche approximately equal to 84 volts reverse. Schottky barriers formed on compensated approximately equal to 5 x 10 to the 15th powercu cm n-type material sustained reverse voltages in excess of 700 volts.
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