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Analysis of Aluminum Oxide Films on Silicon,
CALIFORNIA INST OF TECH PASADENA CALIF DEPT OF ELECTRICAL ENGINEERING
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Aluminum oxide exhibits novel and useful properties as a passivating layer on silicon surfaces. The study was concerned with the properties of hydrolytically grown aluminum oxide films on silicon. The study covered the influence of deposition temperature, of subsequent heat treatment and of anodization. The principal tool of measurement was MeV He ion backscattering technique in addition etch rates were measured and electron diffraction patterns were taken. Aluminum oxide films deposited onto silicon substrates by hydrolysis of AlCl3 show marked differences in etch rates, electron diffraction patterns and chlorine content between films grown below 700C and above 800C. However, both film types are stoichiometric. Author
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