Accession Number:

AD0745772

Title:

Large-Signal Modeling of Bipolar Transistors for Computer-Aided Circuit Analysis.

Descriptive Note:

Technical rept.,

Corporate Author:

STANFORD UNIV CALIF STANFORD ELECTRONICS LABS

Personal Author(s):

• McBride,Laurence Charles

Report Date:

1971-08-01

Pagination or Media Count:

122.0

Abstract:

Improved large-signal models for the bipolar transistor are derived which are suitable for dc and transient computer-aided circuit analysis. The models are developed from the results of a two-dimensional analysis which yields the normal-active dc characteristics of the intrinsic portion of the transistor. Each of the models is formulated in terms of a measurable set of parameters which can theoretically be related to the low-level electrical parameters of the transistor and hence to its basic geometrical and physical characteristics. Based upon the dc model, two transient models are derived which correspond to one- and two-section approximations to the distributed nature of the intrinsic base as seen from the emitter-base terminals. The primary attribute of the single-section model, which corresponds in its complexity to commonly employed models, is its simplicity.

Descriptors:

• (*FIELD EFFECT TRANSISTORS
• MATHEMATICAL MODELS)
• INTEGRATED CIRCUITS
• NUMERICAL ANALYSIS
• TRANSIENTS

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE