Accession Number:

AD0745220

Title:

Electron Paramagnetic Resonance Study of GaAs Surfaces.

Descriptive Note:

Annaul rept. no. 4, 1 Feb 71-31 Jan 72,

Corporate Author:

NEW SOUTH WALES UNIV KENSINGTON (AUSTRALIA) SCHOOL OF PHYSICS

Personal Author(s):

• Haneman,D.

Report Date:

1972-04-01

Pagination or Media Count:

44.0

Abstract:

The authors describe new experimental arrangements for extending EPR measurements on single crystal cleavage surfaces in uhv down to low temperatures, for GaAs studies. This development is necessary to gain the extra sensitivity which is essential when dealing with the very low signals obtained from relatively low area single crystals. In addition, EPR measurements of other diamond structure semiconductor surfaces have been made. These include the clean and oxygen covered surfaces of Ge, CdS, CdSe, ZnSe, PbS, PbTe, and a full range of Ge - Si alloys, studied by crushing in ultra high vacuum.

Descriptors:

• (*GALLIUM ARSENIDES
• *PARAMAGNETIC RESONANCE)
• (*SEMICONDUCTORS
• SURFACE PROPERTIES)
• ADSORPTION
• SINGLE CRYSTALS
• GERMANIUM
• GERMANIUM ALLOYS
• SILICON ALLOYS
• CADMIUM SULFIDES
• CADMIUM SELENIDES
• ZINC COMPOUNDS
• SELENIDES
• LEAD COMPOUNDS
• SULFIDES
• TELLURIDES
• BAND THEORY OF SOLIDS
• AUSTRALIA
• CRYOGENICS

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE