Gunn Effect Microwave Power Source.
Final rept. 1 Mar 71-29 Feb 72,
RCA ELECTRONIC COMPONENTS PRINCETON N J ADVANCED TECHNOLOGY LAB
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An integral heat sink technology for the fabrication of high efficiency transferred electron oscillators was successfully developed. Using this technology, typical device efficiencies were increased from between 3 and 5 to between 6 and 9. The best efficiency obtained was 14, the highest efficiency reported to date for cw TEOs. The highest power output obtained from a single mesa device was 400 mW. The best power output-efficiency combination was 305 mW with 9 efficiency in X-band. A thermal analysis of a typical TEO structure was carried out. The influence of various device design parameters such as heat sink configurations, and nl product on device efficiency were studied. Author
- Electrical and Electronic Equipment