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Accession Number:
AD0744703
Title:
Research in Thin Film Memories
Descriptive Note:
Corporate Author:
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH
Report Date:
1971-07-29
Pagination or Media Count:
16.0
Abstract:
The Research Institute for the Communication-Technological Industry investigated the technology and structure of thin magnetic-layer memories for the past five years. Data on the vapor-deposited plane memories and wire memories were presented. Electron micrographs were presented of a 8020 NiFe layer 15,000 X magnification, a 6040 NiFe layer 15,000, and a pure Fe layer 15,000. The instrument devised for establishing the hysteresis characteristics and some hysteresis diagrams for a 8119 NiFe layer were shown. The wire memories were found to have a number of advantages over the plane memories, but they are more heat-sensitive.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE