Accession Number:

AD0744703

Title:

Research in Thin Film Memories

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH

Personal Author(s):

Report Date:

1971-07-29

Pagination or Media Count:

16.0

Abstract:

The Research Institute for the Communication-Technological Industry investigated the technology and structure of thin magnetic-layer memories for the past five years. Data on the vapor-deposited plane memories and wire memories were presented. Electron micrographs were presented of a 8020 NiFe layer 15,000 X magnification, a 6040 NiFe layer 15,000, and a pure Fe layer 15,000. The instrument devised for establishing the hysteresis characteristics and some hysteresis diagrams for a 8119 NiFe layer were shown. The wire memories were found to have a number of advantages over the plane memories, but they are more heat-sensitive.

Subject Categories:

  • Fabrication Metallurgy
  • Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE