Accession Number:

AD0744343

Title:

Low Temperature Investigations on Epitaxial Silicon using the Micro-Hall Device.

Descriptive Note:

Technical rept.,

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s):

• Baca,J. P.
• Southward,H. D.
• Colclaser,R. A.

Report Date:

1972-05-01

Pagination or Media Count:

80.0

Abstract:

The report is concerned with the feasibility of using the micro-Hall device, introduced by Colclaser and Southward, as a tool for determining important electrical characteristics of epitaxial silicon at low temperatures. The theory of carrier concentration and mobility as a function of temperature in the low temperature range is presented. A contact diffusion mask is introduced which eliminates the formation of an unwanted junction at the substrate contacts and aids in the formation of ohmic contacts. The refrigerator cryo-tip used to obtain low temperatures and a special designed specimen holder which connects to the cryo-tip are described. Author

Descriptors:

• *SILICON
• HALL EFFECT
• CHARGE CARRIERS
• TEST EQUIPMENT
• MANUFACTURING
• CRYOGENICS
• EXPERIMENTAL DESIGN

Subject Categories:

• Electrical and Electronic Equipment
• Test Facilities, Equipment and Methods
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE