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Accession Number:
AD0744343
Title:
Low Temperature Investigations on Epitaxial Silicon using the Micro-Hall Device.
Descriptive Note:
Technical rept.,
Corporate Author:
NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH
Report Date:
1972-05-01
Pagination or Media Count:
80.0
Abstract:
The report is concerned with the feasibility of using the micro-Hall device, introduced by Colclaser and Southward, as a tool for determining important electrical characteristics of epitaxial silicon at low temperatures. The theory of carrier concentration and mobility as a function of temperature in the low temperature range is presented. A contact diffusion mask is introduced which eliminates the formation of an unwanted junction at the substrate contacts and aids in the formation of ohmic contacts. The refrigerator cryo-tip used to obtain low temperatures and a special designed specimen holder which connects to the cryo-tip are described. Author
Distribution Statement:
APPROVED FOR PUBLIC RELEASE