Accession Number:

AD0744343

Title:

Low Temperature Investigations on Epitaxial Silicon using the Micro-Hall Device.

Descriptive Note:

Technical rept.,

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Report Date:

1972-05-01

Pagination or Media Count:

80.0

Abstract:

The report is concerned with the feasibility of using the micro-Hall device, introduced by Colclaser and Southward, as a tool for determining important electrical characteristics of epitaxial silicon at low temperatures. The theory of carrier concentration and mobility as a function of temperature in the low temperature range is presented. A contact diffusion mask is introduced which eliminates the formation of an unwanted junction at the substrate contacts and aids in the formation of ohmic contacts. The refrigerator cryo-tip used to obtain low temperatures and a special designed specimen holder which connects to the cryo-tip are described. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Test Facilities, Equipment and Methods
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE