Low Temperature Investigations on Epitaxial Silicon using the Micro-Hall Device.
NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH
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The report is concerned with the feasibility of using the micro-Hall device, introduced by Colclaser and Southward, as a tool for determining important electrical characteristics of epitaxial silicon at low temperatures. The theory of carrier concentration and mobility as a function of temperature in the low temperature range is presented. A contact diffusion mask is introduced which eliminates the formation of an unwanted junction at the substrate contacts and aids in the formation of ohmic contacts. The refrigerator cryo-tip used to obtain low temperatures and a special designed specimen holder which connects to the cryo-tip are described. Author
- Electrical and Electronic Equipment
- Test Facilities, Equipment and Methods
- Solid State Physics