Accession Number:
AD0744163
Title:
Stress-Measuring Sensor,
Descriptive Note:
Corporate Author:
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Personal Author(s):
Report Date:
1972-04-05
Pagination or Media Count:
7.0
Abstract:
A sensitivity index of up to 10-9 can be achieved for loads of a few milligrams by pressing a needle of 1 mu m radius against a semiconductor load cell. A semiconductor of the N type is coated with thin metal film and a depletion layer between the two has distinct rectifying properties. A bias voltage applied from a DC source in a reverse direction through a contact and an ohmic content causes a slight inverse current flow which is governed by the high barrier voltage at the depletion layer. Pressure by a needle reduces the width of the contact barrier and increases the inverse current sharply. Author
Descriptors:
Subject Categories:
- Test Facilities, Equipment and Methods