Accession Number:

AD0744163

Title:

Stress-Measuring Sensor,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Report Date:

1972-04-05

Pagination or Media Count:

7.0

Abstract:

A sensitivity index of up to 10-9 can be achieved for loads of a few milligrams by pressing a needle of 1 mu m radius against a semiconductor load cell. A semiconductor of the N type is coated with thin metal film and a depletion layer between the two has distinct rectifying properties. A bias voltage applied from a DC source in a reverse direction through a contact and an ohmic content causes a slight inverse current flow which is governed by the high barrier voltage at the depletion layer. Pressure by a needle reduces the width of the contact barrier and increases the inverse current sharply. Author

Subject Categories:

  • Test Facilities, Equipment and Methods

Distribution Statement:

APPROVED FOR PUBLIC RELEASE