Mathematical Simulation of the Effects of Ionizing Radiation on Semiconductors
Final rept. 1 Feb 1970-31 Dec 1971
IBM CORP HOPEWELL JUNCTION NY EAST FISHKILL LABS
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The report outlines results of two-dimensional mathematical investigations initiated during the present contract period the insulated gate field-effect transistor, The Schottky barrier field-effect transistor and the bipolar transistor. In addition, information is presented on the mathematical technique used to solve these semiconductor device problems. A discussion is presented on a newly developed method for numerically solving the two- dimensional ambipolar diffusion equations for holes and electrons in semiconductor material. All numerical computations of this type use under relaxation as a means to attain computational stability the present discussion outlines the automation of this under relaxation process whereby all device calculations can be performed on a hands-off basis. Another new aspect of this computational method is the adoption of a formulation that provides rapid convergence of the calculated electric current in investigations of semiconductor devices.
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics