Accession Number:

AD0744093

Title:

Mathematical Simulation of the Effects of Ionizing Radiation on Semiconductors

Descriptive Note:

Final rept. 1 Feb 1970-31 Dec 1971

Corporate Author:

IBM CORP HOPEWELL JUNCTION NY EAST FISHKILL LABS

Personal Author(s):

• Kennedy, David P.

Report Date:

1972-01-31

Pagination or Media Count:

131.0

Abstract:

The report outlines results of two-dimensional mathematical investigations initiated during the present contract period the insulated gate field-effect transistor, The Schottky barrier field-effect transistor and the bipolar transistor. In addition, information is presented on the mathematical technique used to solve these semiconductor device problems. A discussion is presented on a newly developed method for numerically solving the two- dimensional ambipolar diffusion equations for holes and electrons in semiconductor material. All numerical computations of this type use under relaxation as a means to attain computational stability the present discussion outlines the automation of this under relaxation process whereby all device calculations can be performed on a hands-off basis. Another new aspect of this computational method is the adoption of a formulation that provides rapid convergence of the calculated electric current in investigations of semiconductor devices.

Descriptors:

• *FIELD EFFECT TRANSISTORS
• MATHEMATICAL MODELS
• DAMAGE
• ELECTRICAL CONDUCTIVITY
• RADIATION EFFECTS
• CHARGE CARRIERS
• SUBSTRATES

Subject Categories:

• Electrical and Electronic Equipment
• Radioactivity, Radioactive Wastes and Fission Products
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE