Accession Number:

AD0744068

Title:

Platy Alpha-SiC Single Crystals Grown from Solvent Silicon

Descriptive Note:

Corporate Author:

EMMANUEL COLL BOSTON MA ORIENTAL SCIENCE RESEARCH LIBRARY

Personal Author(s):

• Inomata, Yoshizo
• Inoue, Zenzaburo
• Mitomo, Mamoru

Report Date:

1972-04-12

Pagination or Media Count:

15.0

Abstract:

Platy alpha-SiC crystals of 2-3 mm in diameter were grown in high- density graphite crucibles with high-purity solvent silicon after 5 hours heating at 2200C. The crystals obtained consisted mainly of 6H. When compared with crystals grown by sublimation, the probability of forming twins with a 70 degrees 30 minutes angle between the bases was small. Some of the crystals contained very thin silicon layers, but these regions were generally localized and fine scattered carbon particle inclusions such as seen in crystals prepared by sublimation were not observed. The relation between the polarity of the basal faces and it is suggested that there is a reverse relation between the crystals grown from solvent silicon and those prepared by sublimation.

Descriptors:

• *SILICON CARBIDES
• CARBON
• JAPAN
• CRYSTAL GROWTH
• TWINNING(CRYSTALLOGRAPHY)
• DEFECTS(MATERIALS)
• TRANSLATIONS

Subject Categories:

• Ceramics, Refractories and Glass
• Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE