Accession Number:

AD0743935

Title:

Crystal Properties as Influenced by Crystallographic Imperfections.

Descriptive Note:

Final rept. 1 Jan-31 Dec 71,

Corporate Author:

INTERNATIONAL BUSINESS MACHINES CORP HOPEWELL JUNCTION N Y EAST FISHKILL LAB

Personal Author(s):

• Schwuttke,Guenter H.

Report Date:

1972-02-15

Pagination or Media Count:

117.0

Abstract:

High-energy ion implantation into silicon and the formation of defect structures in silicon after implantation and after annealing is investigated. Specifically, annealing properties of amorphous layers properties of amorphous layers produced by 1 MeV C and Si implantations are studied. Detailed investigations of the damage and ion profiles before and after annealing are presented. It is shown that high-energy silicon bombardment of silicon can produce amorphous isolation regions in silicon and that the insulating properties of such isolation regions are stable for annealing temperatures up to 500C. Precision lattice parameter measurements made on ion-implanted silicon are reported. Double-crystal diffractometer measurements on ion-bombarded silicon are reported. Author

Descriptors:

• *DAMAGE
• ION BOMBARDMENT
• SILICON
• SEMICONDUCTORS
• DEFECTS(MATERIALS)
• ANNEALING
• CRYSTAL LATTICES
• CARBON
• MANUFACTURING
• MANUFACTURING

Subject Categories:

• Radioactivity, Radioactive Wastes and Fission Products
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE