Accession Number:

AD0743834

Title:

A Center of Competence in Solid State Materials and Devices

Descriptive Note:

Corporate Author:

FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Lindholm, Fredrik A.
• Brodersen, Arthur J.
• Chenette, Eugene R.
• Hench, Larry L.
• Li, Sheng S.

Report Date:

1971-10-10

Pagination or Media Count:

178.0

Abstract:

Contents Photodetection using photomagnetoelectric and Dember effects in gold-doped silicon Investigation of the recombination and trapping processes of photo-injected carriers in semi-insulating Cr-doped GaAs using PME and PC methods Low temperature photomagnetoelectric and photoconductive effects in n-type InAs The effect of a buried layer on the collector breakdown voltages of bipolar junction transistors Device characterization for computer analysis of large semiconductor circuits Structural effects on fast neutron radiation sensitivity of semiconducting glasses Effects of microstructure on the radiation stability of amorphous semiconductors Electronic materials interfacial characterization program.

Descriptors:

• *INTEGRATED CIRCUITS
• *SEMICONDUCTOR DEVICES
• *SEMICONDUCTORS
• COMPUTER PROGRAMS
• DAMAGE
• ELECTRICAL PROPERTIES
• GALLIUM ARSENIDES
• HALL EFFECT
• NEUTRON REACTIONS
• NOISE(RADIO)
• OXIDES
• PHOSPHATES
• PHOTOSENSITIVITY
• POTASSIUM COMPOUNDS
• RADIATION EFFECTS
• SILICON
• VANADIUM COMPOUNDS

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE