Accession Number:

AD0743207

Title:

Transistor Nonlinear Damage.

Descriptive Note:

Final rept. Aug 71-Mar 72,

Corporate Author:

BOEING CO SEATTLE WASH AEROSPACE GROUP

Personal Author(s):

Report Date:

1972-05-15

Pagination or Media Count:

168.0

Abstract:

The report summarizes the study of radiation induced surface degradation of 1 discrete planar transistors and 2 of devices in a silicon hybrid array bipolar transistors, MOSFETS, MOS capacitors. The study of planar transistors, resulted in determining 1 the relative role of the charge accumulation and of the interface states in the surface degradation, 2 that no differences exist between the type of surface effects caused by proton and gamma irradiation and 3 the possibility of channeling a new mode of failure of the NPN transistor gain at very high doses. These effects were correlated with the studies of effects in hybrid array devices. Surface conditions as a function of dose were monitored primarily by gate controlled measurements on the bipolar transistors. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE