Accession Number:

AD0743196

Title:

Advanced Concepts of Microwave Generation and Control in Solids.

Descriptive Note:

Quarterly progress rept. no. 5, 1 Oct-31 Dec 71,

Corporate Author:

CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s):

• Dalman,G. C.
• Eastman,L. F.
• Lee,C. A.
• Frey,J.

Report Date:

1972-03-01

Pagination or Media Count:

133.0

Abstract:

The report deals with the progress made during the fifth quarterly period of a solid state microwave oscillator and amplifier research and development program. Discussed is the progress on the Gunn effect and related research. The progress made on a program on microwave transit time devices is also described. The following specific topics are reviewed optimum structures for high average power TRAPATT devices GaAs Schottky barrier avalanche diodes nonlinearities of IMPATT reflection amplifiers integrated IMPATT oscillators integrated TRAPATT oscillators high-frequency high-efficiency avalanche oscillations high frequency PTI microwave oscillators pulsed PTI microwave oscillators power combining circuit studies. Finally, the progress made on the studies of solid state materials for microwave devices are reported. The topics include ion implantation and diffusion vacuum epitaxial growth in silicon and ionization rates in gallium arsenide. Author

Descriptors:

• (*MICROWAVE OSCILLATORS
• *SEMICONDUCTOR DIODES)
• MICROWAVE AMPLIFIERS
• HARMONIC GENERATORS
• AVALANCHE DIODES
• SILICON
• ION BOMBARDMENT
• EPITAXIAL GROWTH
• GALLIUM ARSENIDES
• IONIZATION

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE