Advanced Concepts of Microwave Generation and Control in Solids.
Quarterly progress rept. no. 5, 1 Oct-31 Dec 71,
CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING
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The report deals with the progress made during the fifth quarterly period of a solid state microwave oscillator and amplifier research and development program. Discussed is the progress on the Gunn effect and related research. The progress made on a program on microwave transit time devices is also described. The following specific topics are reviewed optimum structures for high average power TRAPATT devices GaAs Schottky barrier avalanche diodes nonlinearities of IMPATT reflection amplifiers integrated IMPATT oscillators integrated TRAPATT oscillators high-frequency high-efficiency avalanche oscillations high frequency PTI microwave oscillators pulsed PTI microwave oscillators power combining circuit studies. Finally, the progress made on the studies of solid state materials for microwave devices are reported. The topics include ion implantation and diffusion vacuum epitaxial growth in silicon and ionization rates in gallium arsenide. Author
- Electrical and Electronic Equipment
- Solid State Physics