Accession Number:

AD0743134

Title:

Studies of Radiation Damage in Semiconductors

Descriptive Note:

Annual rept. 1 May 1971-30 Apr 1972

Corporate Author:

STATE UNIV OF NEW YORK AT ALBANY RESEARCH FOUNDATION

Personal Author(s):

• Corbett, James W.

Report Date:

1972-04-30

Pagination or Media Count:

22.0

Abstract:

The program on the study of radiation damage in semiconductors is described. This work divides into three areas 1 EPR measurements on silicon and diamond 2 optical and electrical measurements on silicon and diamond and 3 theoretical work on these materials and their defect structures, including the nature of the amorphous state.

Descriptors:

• *DAMAGE
• *SEMICONDUCTORS
• OPTICAL PROPERTIES
• DIAMONDS
• ELECTRICAL PROPERTIES
• IMPURITIES
• MICROSCOPY
• CRYSTAL DEFECTS
• SILICON
• PARAMAGNETIC RESONANCE

Subject Categories:

• Radioactivity, Radioactive Wastes and Fission Products
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE