A Study of RF Sputter Etching in an Argon Plasma Using Silicon as a Target.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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Highly reproducible etch rates were achieved by sputter etching on silicon and aluminum targets in an RF generated argon plasma. The target materials were subjected to a number of different etching conditions to evaluate the dependence of etch rate upon electrode separation, argon pressure, self-biasing voltage, and a static magnetic field. Formulas for etch rate dependence upon the self-bias boltage and magnetic field were derived from theoretical considerations and experimental observations. Plasma contamination and masking technique were critical factors. With the proper selection of etching conditions, etch rates were reproduced with an error less than 5. Author
- Fabrication Metallurgy