Application of CV Characteristics to Controlling MIS Processing.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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The purpose of this report is to determine the usefulness of the capacitance-voltage CV method as a process control tool. To accomplish this task a study of the physics of MIS structures and the theory of the CV method are given. Then it is shown how the method can be used to obtain various physical properties of the semiconductor, insulator, and semiconductor-insulator interface. A computer program which facilitates the determination of various properties from the CV characteristic is included. The substrate material used is n-type silicon and the kinds of insulators investigated in this study are Si3N4SiO2, Al2O3SiO2, and SiO2. Author
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems
- Solid State Physics