Research in Ferromagnetics: Domain Tip Propagation Devices.
Final rept. 28 Feb-31 Dec 71,
CAMBRIDGE MEMORIES INC NEWTONVILLE MASS MAGNETIC THIN FILM DEVELOPMENT DEPT
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The DOT aluminum underlayer was investigated. Experimental results for the coercivity of the film over aluminum as a function of aluminum and magnetic thicknesses and aluminum deposition substrate temperature are presented. Additional studies on the subject of DOT inductive readout are described. A new technique for doubling the signal amplitude is illustrated and the channel structure optimized. DOT element evaluation is discussed. The effect of channel width, magnetic film thickness and aluminum deposition substrate temperature on channel propagation thresholds is considered. Two DOT memory systems are described. One a shift register, the other a BORAM Block Oriented Random Access Memory demonstrate many of the features of the DOT technique. Nuclear radiation experiments are discussed. A correction of a previously reported result is presented. Author
- Computer Hardware
- Solid State Physics