Reliability Problems with SiO2 Passivation and Glassivation
ROME AIR DEVELOPMENT CENTER GRIFFISS AFB NY
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The effect of differential expansion or contraction on the integrity of silicon integrated circuits is treated in part in this report. Specifically, relaxation of interface stress between Si and SiO2, cracks in Si or SiO2 due to upquenching, and problems with glassivation are addressed. The problems are shown to be real, and some suggestions for handling the difficulties are given.
- Electrical and Electronic Equipment
- Coatings, Colorants and Finishes
- Manufacturing and Industrial Engineering and Control of Production Systems