Accession Number:

AD0741765

Title:

Reliability Problems with SiO2 Passivation and Glassivation

Descriptive Note:

Technical rept.

Corporate Author:

ROME AIR DEVELOPMENT CENTER GRIFFISS AFB NY

Personal Author(s):

Report Date:

1972-03-01

Pagination or Media Count:

40.0

Abstract:

The effect of differential expansion or contraction on the integrity of silicon integrated circuits is treated in part in this report. Specifically, relaxation of interface stress between Si and SiO2, cracks in Si or SiO2 due to upquenching, and problems with glassivation are addressed. The problems are shown to be real, and some suggestions for handling the difficulties are given.

Subject Categories:

  • Electrical and Electronic Equipment
  • Coatings, Colorants and Finishes
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE