Accession Number:

AD0741348

Title:

Optoelectronic Electron Emitter.

Descriptive Note:

Semiannual rept. 15 Apr-31 Sep 71,

Corporate Author:

RCA LABS PRINCETON N J

Report Date:

1972-04-01

Pagination or Media Count:

31.0

Abstract:

A greatly improved cold-cathode emitter was developed based on the use of liquid-phase epitaxy, AlGaAs-GaAs heterojunctions, and negative-electron-affinity GaAs surfaces. An important part of the device is the lateral confinement of the current flow to the desired emitting surface by a novel fabrication technique involving the selective diffusion of Zn. It was shown for the first time that III-V semiconductor cold-cathodes are capable of dc operation at efficiencies and emission-current densities of practical interest, and record values were obtained which exceeded the objectives of this program. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE