Optoelectronic Electron Emitter.
Semiannual rept. 15 Apr-31 Sep 71,
RCA LABS PRINCETON N J
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A greatly improved cold-cathode emitter was developed based on the use of liquid-phase epitaxy, AlGaAs-GaAs heterojunctions, and negative-electron-affinity GaAs surfaces. An important part of the device is the lateral confinement of the current flow to the desired emitting surface by a novel fabrication technique involving the selective diffusion of Zn. It was shown for the first time that III-V semiconductor cold-cathodes are capable of dc operation at efficiencies and emission-current densities of practical interest, and record values were obtained which exceeded the objectives of this program. Author
- Electrical and Electronic Equipment