Accession Number:

AD0741260

Title:

Infrared Photocathode

Descriptive Note:

Annual rept. 1 May 1971-30 Apr 1972

Corporate Author:

GTE SYLVANIA INC MOUNTAIN VIEW CA ELECTRO-OPTICS ORGANIZATION

Personal Author(s):

Report Date:

1972-04-30

Pagination or Media Count:

21.0

Abstract:

The amount of Cs-O low-work-function-surface material required to optimize the photoresponse of InAs0.4P0.6 depends upon the wavelength at which the response is to be maximized. It is shown that the optimum thickness increases exponentially with wavelength. The effect of thick Cs-O layers on photoemission from GaAs and InAs0.4P0.6 cathodes is experimentally investigated. Simple empirical relationships between the yield and thickness and between the escape probability and thickness are derived.

Subject Categories:

  • Electrical and Electronic Equipment
  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE