Recombination Studies and Radiative Transitions in Semiconductors.
Final scientific rept. 1 Feb 67-31 Jan 72,
FLORIDA ATLANTIC UNIV BOCA RATON DEPT OF PHYSICS
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The report is concerned with electron generation and recombination processes in semiconductors. Some work is described with germanium and purified monocrystal tellurium, but emphasis is on roles of deep flaw levels in silicon and gallium arsenide. Photoionization properties, and hole capture as determined from photoconductance, are measured for indium in silicon, and for manganese, cobalt, and nickel in gallium arsenide. Experimental results are correlated with theoretical models for deep flaw states. Author
- Solid State Physics