Accession Number:

AD0739613

Title:

Spectral Analysis of Photoemissive Yields in GaAs and Related Crystals,

Descriptive Note:

Corporate Author:

LOCKHEED MISSILES AND SPACE CO PALO ALTO CALIF PALO ALTO RESEARCH LAB

Personal Author(s):

Report Date:

1971-01-01

Pagination or Media Count:

9.0

Abstract:

The strongest optical reflectivity peak at 5 eV in GaAs and the corresponding dip at 5 eV in the photoemissive yield curve have long been associated with X5v to X1c transitions. Since recent experimental and theoretical studies indicate that X1c - X5v 4.2 plus or minus 0.1 eV, this association is invalid. Accordingly, most of the earlier estimates of X1c - X5v and X3c - X5v in GaAs and related crystals will have to be revised, as will empirical band models based on these estimates. An improved energy band model for GaAs is reported. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE