Advanced Concepts of Microwave Generation and Control in Solids.
Quarterly progress rept. no. 4, 1 Jul-30 Sep 71,
CORNELL UNIV ITHACA N Y
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The report deals with the progress made during the fourth quarterly period of a solid state microwave oscillator and amplifier research and development program. Discussed first is the progress on Gunn effect research. Work on the following specific topics is reviewed frequency control studies of LSA oscillators some harmonic properties of an LSA oscillator LSA circuit studies control of silicon contamination in GaAs a varactor tuned Gunn oscillator and Gunn effect amplifiers. The progress made on a program on avalanche devices is also described. The following specific topics are reviewed higher average power TRAPATT considerations GaAs Schottky barrier IMPATT diodes nonlinearities of IMPATT reflection amplifiers with two input signals integrated IMPATT and TRAPATT oscillators and high-frequency high-efficiency avalanche oscillations. Studies of an experimental Pt-n-p punch-through-injection Ku-band diode are reported. Finally, the progress made on the studies of solid state materials for microwave devices are reported. The topics include ion implantation and diffusion vacuum expitaxial growth in silicon and ionization rates in gallium arsenide. Author
- Electrical and Electronic Equipment
- Solid State Physics