Experimental Study of Germanium Cell Performance with Erbium Oxide and Silicon Carbide Radiators.
Research and development technical rept.,
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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The results of an experimental investigation are reported covering measured data of the output of a germanium Ge photovoltaic cell of the NP alloyed junction type and data on the radiancy of erbium oxide Er2O3 and silicon carbide SiC thermal emitters in the temperature range of 1200-2000K. A range of incident radiation on the cell from 0 to 5 Wsq cm was used for both types of radiators. Cell output performance is presented in the ratio IscHT which represents the short circuit current output of the cell divided by the total incident radiation. This ratio, called the chromatic response of the Ge-cell, strongly depends on the spectral match between incident radiation and spectral response of the cell. It is concluded that the use of Er2O3 as a radiator material can provide, depending on the operating temperature, a 50-100 increase in the conversion efficiency of a Ge-cell thermophotovoltaic-generator when compared with SiC. Author
- Electric Power Production and Distribution