New Methods for Growth and Characterization of GaAs and Mixed III-V Semiconductor Crystals
Semi-Annual technical rept. 1 Jul 1971-1 Jan 1972
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES
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The purpose of the program is to develop new and improved methods for the growth and characterization of gallium arsenide GaAs and mixed III-V semiconductor crystals. A new Czochralski technique has been developed. An apparatus for liquid-encapsulated floating-zone melting of III-V crystals has been constructed. The kinetics of drying and moisture absorption by boron oxide encapsulant have been measured and published. Further improvements have been made in the travelling heater growth method. A new method is being developed to lower oxygen concentrations during liquid epitaxial growth of GaAs, so as to permit growth at significantly lower temperatures. The influence of bending and short term heating on mobility and carrier concentration of GaAs has been studied.
- Solid State Physics