Accession Number:

AD0738690

Title:

Memory Switching and Crystallization in Selenium,

Descriptive Note:

Corporate Author:

MCGILL UNIV MONTREAL (QUEBEC) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1971-06-14

Pagination or Media Count:

8.0

Abstract:

A memory switching effect in bulk polycrystalline selenium has been investigated. I-V characteristics are related to structural changes revealed by microscopic examination, where it is shown that the switching mechanism is a crystal-amorphous phase transformation. A molten zone, produced by a direct current through the sample, undergoes a polarity dependent motion. The zone motion is discussed in terms of field-assisted ionic diffusion and it is suggested that this could be made into a useful crystal growing technique. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE