Accession Number:
AD0738690
Title:
Memory Switching and Crystallization in Selenium,
Descriptive Note:
Corporate Author:
MCGILL UNIV MONTREAL (QUEBEC) DEPT OF ELECTRICAL ENGINEERING
Personal Author(s):
Report Date:
1971-06-14
Pagination or Media Count:
8.0
Abstract:
A memory switching effect in bulk polycrystalline selenium has been investigated. I-V characteristics are related to structural changes revealed by microscopic examination, where it is shown that the switching mechanism is a crystal-amorphous phase transformation. A molten zone, produced by a direct current through the sample, undergoes a polarity dependent motion. The zone motion is discussed in terms of field-assisted ionic diffusion and it is suggested that this could be made into a useful crystal growing technique. Author
Descriptors:
Subject Categories:
- Solid State Physics