Accession Number:

AD0738661

Title:

Characterization of Surface States at the Si-SiO2 Interface Using the Quasi-Static Technique,

Descriptive Note:

Corporate Author:

TORONTO UNIV (ONTARIO) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1971-05-06

Pagination or Media Count:

6.0

Abstract:

The quasi-static technique is used to investigate the effect of processing parameters on the surface-state density at the silicon-thermally grown silicon dioxide interface. The determination of the constant required for the evaluation of surface potential from equilibrium C-V data is discussed. A rapid method of estimating the midgap density of surface states is also described. The dependence of surface-state density on substrate orientation, type of oxide growth, high-temperature annealing in nitrogen, low-temperature heat treatment in forming gas, and temperature of oxide growth are discussed. The interdependence between the fixed oxide charge and the surface-state density is also investigated. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE