Accession Number:
AD0738631
Title:
Narrow Gap Semiconductors Pb(1-x)Sn(x)Te and Pb(1-y)Sn(y)Se.
Descriptive Note:
Final rept. 1 Jun 70-30 Sep 71,
Corporate Author:
CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE
Personal Author(s):
Report Date:
1971-12-01
Pagination or Media Count:
173.0
Abstract:
The purpose of this study is to develop a material process to grow device-grade Pb-Sn chalcogenide alloy thin films on insulating substrates for long wavelength infrared LWIR applications to characterize their semiconductor behavior and, to determine material properties of Pb-Sn chalcogenide alloys. Author
Descriptors:
Subject Categories:
- Infrared Detection and Detectors
- Solid State Physics