Narrow Gap Semiconductors Pb(1-x)Sn(x)Te and Pb(1-y)Sn(y)Se.
Final rept. 1 Jun 70-30 Sep 71,
CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE
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The purpose of this study is to develop a material process to grow device-grade Pb-Sn chalcogenide alloy thin films on insulating substrates for long wavelength infrared LWIR applications to characterize their semiconductor behavior and, to determine material properties of Pb-Sn chalcogenide alloys. Author
- Infrared Detection and Detectors
- Solid State Physics