Accession Number:

AD0738631

Title:

Narrow Gap Semiconductors Pb(1-x)Sn(x)Te and Pb(1-y)Sn(y)Se.

Descriptive Note:

Final rept. 1 Jun 70-30 Sep 71,

Corporate Author:

CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s):

Report Date:

1971-12-01

Pagination or Media Count:

173.0

Abstract:

The purpose of this study is to develop a material process to grow device-grade Pb-Sn chalcogenide alloy thin films on insulating substrates for long wavelength infrared LWIR applications to characterize their semiconductor behavior and, to determine material properties of Pb-Sn chalcogenide alloys. Author

Subject Categories:

  • Infrared Detection and Detectors
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE