Synthesis of Compound Semiconducting Materials and Device Applications
Semi-annual technical rept. 1 Jul-31 Dec 1971
STANFORD UNIV CA CENTER FOR MATERIALS RESEARCH
Pagination or Media Count:
The present program concerns the synthesis of compound semiconducting materials, with particular emphasis on their use in planar microwave devices. The program consists of three major sections thin film epitaxial growth of III-V compounds device design, fabrication and evaluation and fundamental studies of crystal synthesis and properties. The devices of primary interest are of the planar microwave and acoustical type, employing thin films of GaAs as the active layer. The topics include observations of precipitation effects in GaAs by transmission electron microscopy measurement of electrical property changes in GaAs induced by changes in dislocation density and a theoretical analysis of the GaAsliquid gallium interface.
- Line, Surface and Bulk Acoustic Wave Devices
- Solid State Physics