Accession Number:

AD0738467

Title:

Research on Amorphous Materials

Descriptive Note:

Semi-Annual technical rept. 1 Jul-31 Dec 1971

Corporate Author:

STANFORD UNIV CA CENTER FOR MATERIALS RESEARCH

Report Date:

1971-12-31

Pagination or Media Count:

113.0

Abstract:

Contents The density of states of crystalline and amorphous Ge and Si Photoemission investigation of amorphous Si and Ge Investigation of the band edges of amorphous Ge and Si Impurity electrons in amorphous Germanium a photoemission argument for the Mott model UV dielectric constants of a-Ge as a function of film density Photoemission investigation of amorphous Germanium Electronic structure of amorphous and polycrystalline GeTe Calculation of the intercrystalline interference contribution to the scattering of X-rays by arrays of small crystallites Neutron and X-ray diffraction radial distribution studies of amorphous Ge.17Te.83 Structure and bonding in amorphous GexTe1-x alloys Radial distribution studies of glassy GexS1-x alloys Analysis of photoconductivity in amorphous chalcogenides.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE