Field-Effect Transistor RF Power Amplifiers.
Research and development technical rept.,
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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The report documents the results of a series of tests devised to evaluate state-of-the-art field-effect transistors FETs as RF power amplifiers. Power output, gain and efficiency are studied special attention is given to reliability and intermodulation distortion IMD evaluation. Conclusions drawn from the data indicate that integration of FETs in their present form into RF power amplifier designs is not feasible. Recommendations are made to modify present device designs to remove operational restrictions. Author
- Electrical and Electronic Equipment