Image Conversion Panel Techniques Using Direct Carrier Injection (Diode Development).
Semiannual rept. 1 Apr-30 Sep 71,
HUGHES RESEARCH LABS MALIBU CALIF
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Large p-i-n diode structures suitable for use in millimeter wave image conversion panels have been developed. Typical dimensions are 0.25 cm in width by 0.28 cm in length by 0.11 cm in thickness between injecting contacts. Ion implanted arsenic and alloyed aluminum form the n and p junctions, respectively, on 18 kiloohm - cm silicon. Image conversion panels operating at 10 framessec and containing up to 1000 diode elements can be constructed using the present diodes. Author
- Electrical and Electronic Equipment
- Solid State Physics