Zero-Bias Contact Resistances of Au-GaAs Schottky Barriers.
Rept. for Jan 69-Jun 70,
AEROSPACE CORP EL SEGUNDO CALIF LAB OPERATIONS
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The contact resistances of gold-GaAs Schottky barriers have been measured at liquid nitrogen temperatures over the range of electron concentrations from 3.2 X 10 to the 18th power to 2.4 X 10 to the 19th powercc. The theoretical treatment is based on that of Padovani and Stratton but is modified to include Franzs two-band model for the imaginary wave vector of the tunneling electrons and Conley and Mahans correction to the space-charge potential in degenerate semiconductors. The results correlate well with the theory in the 3.2 X 10 to the 18th power to 5.6 X 10 to the 18th powercc range of concentrations. The theory must be extended to include the effects of fluctuating depletion width a suggestion originally made by Bethe to adequately explain the low contact resistances obserbed with the heaviest doped GaAs. This material is a degenerate and heavily compensated tin alloy regrowth commonly used as an ohmic contact. Author
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