Accession Number:

AD0736851

Title:

Fundamental Studies of Semiconductors Heteroepitaxy

Descriptive Note:

Semiannual rept. no. 3, Jul-Dec 1971

Corporate Author:

AUTONETICS ANAHEIM CA

Personal Author(s):

Report Date:

1972-01-01

Pagination or Media Count:

107.0

Abstract:

The objective of this program is to carry out a fundamental study of nucleation and film growth mechanisms in heteroepitaxial semiconductor thin films, and to apply the results to the preparation of improved films and thin- film devices on insulating substrates. Both theoretical and experimental investigations are involved, with emphasis on chemical vapor deposition CVD techniques applied to the Si-on-Al2O3 and GaAs-on-Al2O3 systems. Two theoretical approaches to modeling the heteroepitaxial interface are being investigated.

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE