Semiconductor Conductivity Using a High Sensitivity Technique.
Research and development technical rept.,
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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An experimental study of a reflection cavity scheme used to measure changes in the conductivity of semiconductor samples is presented. The germanium sample with associated microwave circuitry acts as a highly sensitive system whereby in the null condition almost complete absorption occurs. Changes in conductivity from the null point will cause a sharp increase in reflected microwave power. This change in reflected power may be used to measure a change in conductivity, or in a device application would represent the output signal. Calculations indicate that as an infrared photo-conductive detector, this microwave effect may be competitive with state-of-the-art components. Author
- Infrared Detection and Detectors
- Solid State Physics