Accession Number:

AD0736366

Title:

Semiconductor Conductivity Using a High Sensitivity Technique.

Descriptive Note:

Research and development technical rept.,

Corporate Author:

ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Report Date:

1971-11-01

Pagination or Media Count:

61.0

Abstract:

An experimental study of a reflection cavity scheme used to measure changes in the conductivity of semiconductor samples is presented. The germanium sample with associated microwave circuitry acts as a highly sensitive system whereby in the null condition almost complete absorption occurs. Changes in conductivity from the null point will cause a sharp increase in reflected microwave power. This change in reflected power may be used to measure a change in conductivity, or in a device application would represent the output signal. Calculations indicate that as an infrared photo-conductive detector, this microwave effect may be competitive with state-of-the-art components. Author

Subject Categories:

  • Infrared Detection and Detectors
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE