The Fabrication and Experimental Analysis of Metal-Insulator-Semiconductor Devices for Radiation Vulnerability Studies.
NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH
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The report discusses the following The insulated gate field effect transistor IGFET Nuclear radiation effects on the IGFET The fabrication of metal-insulator-silicon MIS capacitors Analysis of the MIS capacitor Testing of experimental devices, and Analysis of the experimental data.
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products