Accession Number:

AD0735947

Title:

The Fabrication and Experimental Analysis of Metal-Insulator-Semiconductor Devices for Radiation Vulnerability Studies.

Descriptive Note:

Technical rept.,

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s):

Report Date:

1971-12-01

Pagination or Media Count:

271.0

Abstract:

The report discusses the following The insulated gate field effect transistor IGFET Nuclear radiation effects on the IGFET The fabrication of metal-insulator-silicon MIS capacitors Analysis of the MIS capacitor Testing of experimental devices, and Analysis of the experimental data.

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE