Accession Number:

AD0735947

Title:

The Fabrication and Experimental Analysis of Metal-Insulator-Semiconductor Devices for Radiation Vulnerability Studies.

Descriptive Note:

Technical rept.,

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s):

• Williamson,T. A.
• Grannemann,W. W.

Report Date:

1971-12-01

Pagination or Media Count:

271.0

Abstract:

The report discusses the following The insulated gate field effect transistor IGFET Nuclear radiation effects on the IGFET The fabrication of metal-insulator-silicon MIS capacitors Analysis of the MIS capacitor Testing of experimental devices, and Analysis of the experimental data.

Descriptors:

• *FIELD EFFECT TRANSISTORS
• *DAMAGE
• *CAPACITORS
• SEMICONDUCTOR DEVICES
• NUCLEAR RADIATION
• COMPUTER PROGRAMS
• MANUFACTURING
• VULNERABILITY
• TEST METHODS

Subject Categories:

• Electrical and Electronic Equipment
• Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE