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Accession Number:
AD0735947
Title:
The Fabrication and Experimental Analysis of Metal-Insulator-Semiconductor Devices for Radiation Vulnerability Studies.
Descriptive Note:
Technical rept.,
Corporate Author:
NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH
Report Date:
1971-12-01
Pagination or Media Count:
271.0
Abstract:
The report discusses the following The insulated gate field effect transistor IGFET Nuclear radiation effects on the IGFET The fabrication of metal-insulator-silicon MIS capacitors Analysis of the MIS capacitor Testing of experimental devices, and Analysis of the experimental data.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE