Excess Noise in Semiconductors.
Final rept. 15 Nov 65-14 Nov 71,
IIT RESEARCH INST CHICAGO ILL
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Several experimental studies of the statistical properties of 1f noise in semiconductors have shown that the probability amplitude distribution obeys a normal distribution law. The total variance of the distribution fluctuates in identical sample intervals. Variance fluctuations measured for several sources of 1f noise are not normally distributed and appear to be derived from an exponential population. The variance noise spectrum is examined by a combined analog-digital technique and it is found to have a 1f spectrum. The magnitude of 1f noise in germanium is shown to be inversely proportional to the number of current carriers participating in conduction. This inverse relation holds for both extrinsic carriers and photocarriers generated by optical illumination. Author
- Solid State Physics