Accession Number:

AD0735944

Title:

Excess Noise in Semiconductors.

Descriptive Note:

Final rept. 15 Nov 65-14 Nov 71,

Corporate Author:

IIT RESEARCH INST CHICAGO ILL

Personal Author(s):

• Brophy,James J.

Report Date:

1971-11-14

Pagination or Media Count:

64.0

Abstract:

Several experimental studies of the statistical properties of 1f noise in semiconductors have shown that the probability amplitude distribution obeys a normal distribution law. The total variance of the distribution fluctuates in identical sample intervals. Variance fluctuations measured for several sources of 1f noise are not normally distributed and appear to be derived from an exponential population. The variance noise spectrum is examined by a combined analog-digital technique and it is found to have a 1f spectrum. The magnitude of 1f noise in germanium is shown to be inversely proportional to the number of current carriers participating in conduction. This inverse relation holds for both extrinsic carriers and photocarriers generated by optical illumination. Author

Descriptors:

• (*SEMICONDUCTORS
• *NOISE(RADIO))
• STATISTICAL ANALYSIS
• POWER SPECTRA
• SEMICONDUCTOR DIODES
• GERMANIUM

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE