Accession Number:
AD0735317
Title:
A Thick-Film Microstrip Single-Sideband Pin Diode Modulator for X-Band,
Descriptive Note:
Corporate Author:
HARRY DIAMOND LABS WASHINGTON D C
Personal Author(s):
Report Date:
1971-12-01
Pagination or Media Count:
23.0
Abstract:
A microstrip single-sideband modulator that operates at 9 GHz was developed for simulating target doppler fuzes. The circuit consists of two PIN diodes terminating a single input-output line. These two diodes are located with a difference in electrical spacing from the common input line of one-eighth wavelength at the carrier frequency. The diodes are mounted onto gold tabs 20 by 65 mils with two 20-mil-long wire leads connected to the diode junction. Using a thick-film subtractive technique, the microstrip circuit is produced on alumina Al2O3. Both sides of a standard 1-sq. in. alumina substrate are metallized, using thick-film technology the microstrips are formed by photoetching one side. The diodes are epoxy bonded, and their wire leads are thermocompression bonded. Author
Descriptors:
Subject Categories:
- Electrical and Electronic Equipment