Accession Number:

AD0734903

Title:

Research in the Field of Memories Operating on the Basis of Thin Magnetic Layers,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

Report Date:

1971-10-26

Pagination or Media Count:

13.0

Abstract:

The Research Institute for the Communication Technological Industry investigated the technology and structure of thin magnetic layer memories for nearly five years. Data on the vapor deposited plane memories and wire memories were presented. Electron micrographs were presented of a 8020 Ni, Fe layer 15,000 times magnification, a 6040 Ni, Fe layer 15,000, and a pure Fe layer 15,000. The instrument devised for establishing the hysteresis characteristics, and some hysteresis diagrams for a 8191 Ni, Fe layer were shown. The wire memories were found to have a number of advantages over the plane memories, but they are more heat sensitive. Author

Subject Categories:

  • Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE