Preparation and Properties of Epitaxial Lead Sulfide Infrared Detectors.
NAVAL ORDNANCE LAB WHITE OAK MD
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A new method is reported for growing high quality, epitaxial PbS films under near equilibrium conditions. Both n and p-type films ranging in carrier density from 1x10 to the 17th power to 3x10 to the 18th powercc were prepared by adjusting their stoichiometry during the growth phase. A study of the photoconductive properties of these films indicates that excess carrier lifetimes are less than the radiative lifetimes due to recombination at shallow Shockley-Read centers. Photoconductive and photovoltaic infrared detectors were prepared from the films. The photovoltaic detectors were Schottky barriers formed by evaporating indium onto p-type PbS films. The author concludes that the PbS Schottky barrier photodiodes are superior in performance to the epitaxial photoconductive detectors. Author
- Manufacturing and Industrial Engineering and Control of Production Systems
- Infrared Detection and Detectors
- Solid State Physics