Accession Number:

AD0734384

Title:

Preparation and Properties of Epitaxial Lead Sulfide Infrared Detectors.

Descriptive Note:

Technical rept.,

Corporate Author:

NAVAL ORDNANCE LAB WHITE OAK MD

Personal Author(s):

Report Date:

1971-10-15

Pagination or Media Count:

50.0

Abstract:

A new method is reported for growing high quality, epitaxial PbS films under near equilibrium conditions. Both n and p-type films ranging in carrier density from 1x10 to the 17th power to 3x10 to the 18th powercc were prepared by adjusting their stoichiometry during the growth phase. A study of the photoconductive properties of these films indicates that excess carrier lifetimes are less than the radiative lifetimes due to recombination at shallow Shockley-Read centers. Photoconductive and photovoltaic infrared detectors were prepared from the films. The photovoltaic detectors were Schottky barriers formed by evaporating indium onto p-type PbS films. The author concludes that the PbS Schottky barrier photodiodes are superior in performance to the epitaxial photoconductive detectors. Author

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Infrared Detection and Detectors
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE