Junction Growth Techniques for GaAs Avalanche Transit Time Devices.
Final rept. 1 Jul 70-30 Jun 71,
GTE LABS INC BAYSIDE N Y
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A summary is presented of the results that were achieved in preparing GaAs wafers in pnn configuration for use in fabricating avalanche transit-time devices. The nn and pn junctions were formed by growing epitaxial layers using a new technique of growth from the liquidphase known as Transient-Mode Liquid Epitaxy TMLE. The n substrates were low-dislocation-density Si-doped GaAs wafers prepared by bulk crystal growth gradient-freeze techniques. A description is given of the apparatus and growth procedures used. Methods for characterizing the material throughout the various processing steps are discussed with emphasis placed on nondestructive techniques. The relationship of wafer properties to some microwave device operation results is included. Author
- Manufacturing and Industrial Engineering and Control of Production Systems
- Solid State Physics