Accession Number:

AD0734160

Title:

A Radiation Effects Research Program.

Descriptive Note:

Annual rept. 1 Sep 70-31 Aug 71,

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Report Date:

1971-09-01

Pagination or Media Count:

173.0

Abstract:

Contents Radiation effects on gallium arsenide phosphide and gallium phosphide Schottky barrier diodes Diffusion of Zn in GaAsP Low volume depletion region Schottky barrier diodes Neutron and gamma radiation effects in GaAs laser diodes and bulk materials MIS Metal-Insulator-Semiconductor studies Fabrication and testing of GaAsP MIS capacitors Thermal oxidation of gallium arsenide phosphide Electron beam irradiation studies Magnetoresistance and radiation effects on electron beam evaporated high mobility thin films of indium antimonide Hall effect in dielectric material Micro-hall device studies Radiation effects on epitaxial silicon Semiconductor modeling study Electrons in disordered crystals Application of invariant imbedding methods to problems of transport theory and wave propagation.

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE