400 Ampere High Power Transcalent Semiconductor Thyristor Device. Supplementary Report No. 2.
Report. no. 4, 1 Jan-31 Aug 71,
RCA ELECTRONIC COMPONENTS LANCASTER PA
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Work performed was devoted to the development of a silicon thyristor wafer which could be cooled from both sides in the transcalent package to take maximum advantage of the thermal dissipation capabilities of the heat pipe. Author
- Electrical and Electronic Equipment